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Si6928DQ
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
30
R DS(on) ( Ω )
0.035 at V GS = 10 V
0.050 at V GS = 4.5 V
I D (A)
± 4.0
± 3.4
? Halogen-free Option Available
P b -free
A v aila b le
RoHS*
COMPLIANT
TSSOP-8
D 1
D 2
D 1
S 1
1
2
Si6928DQ
8
7
D 2
S 2
G 1
G 2
S 1
G 1
3
4
6
5
S 2
G 2
Top View
Ordering Inf ormation: Si6928DQ-T1
S 1
S 2
Si6928DQ-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
Limit
30
± 20
Unit
V
Continuous Drain Current (T J = 150 °C) a
Pulsed Drain Current
Continuous Source Current (Diode Conduction) a
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
T A = 25 °C
T A = 70 °C
T A = 25 °C
T A = 70 °C
I D
I DM
I S
P D
T J , T stg
± 4.0
± 3.2
± 20
1.25
1.0
0.64
- 55 to 150
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
Maximum Junction-to-Ambient
a
R thJA
125
°C/W
Notes:
a. Surface Mounted on FR4 board, t ≤ 10 s.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 70663
S-81056-Rev. D, 12-May-08
www.vishay.com
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